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Ȩ Ȩ > ¿¬±¸¹®Çå > ±¹³» ³í¹®Áö > Çѱ¹Á¤º¸°úÇÐȸ ³í¹®Áö > Á¤º¸°úÇÐȸ³í¹®Áö (Journal of KIISE)

Á¤º¸°úÇÐȸ³í¹®Áö (Journal of KIISE)

Current Result Document :

ÇѱÛÁ¦¸ñ(Korean Title) MLC ³½µå Ç÷¡½Ã ±â¹Ý ÀúÀåÀåÄ¡ÀÇ ¾²±â ¼º´É °³¼±À» À§ÇÑ °èÃþ ±³Â÷Àû ÃÖÀûÈ­ ±â¹ý
¿µ¹®Á¦¸ñ(English Title) A Cross Layer Optimization Technique for Improving Performance of MLC NAND Flash-Based Storages
ÀúÀÚ(Author) ¹ÚÁö¼º   À̼ºÁø   ±èÁöÈ«   Jisung Park   Sungjin Lee   Jihong Kim  
¿ø¹®¼ö·Ïó(Citation) VOL 44 NO. 11 PP. 1130 ~ 1137 (2017. 11)
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(Korean Abstract)
ÇϳªÀÇ ¸Þ¸ð¸® ¼¿¿¡ ¿©·¯ ºñÆ®ÀÇ Á¤º¸¸¦ ÀúÀåÇÏ´Â ´ÙÄ¡È­ ±â¹ýÀº °øÁ¤ ¹Ì¼¼È­¿Í ÇÔ²² ³½µå Ç÷¡½Ã ¸Þ¸ð¸®ÀÇ ÁýÀûµµ¸¦ Å©°Ô Çâ»ó½ÃÄ×Áö¸¸, ±× ¹Ý´ë±ÞºÎ·Î MLC ³½µå Ç÷¡½Ã ¸Þ¸ð¸®ÀÇ Æò±Õ ¾²±â ¼º´ÉÀº SLC ³½µå Ç÷¡½Ã ¸Þ¸ð¸® ´ëºñ µÎ ¹è ÀÌ»ó Ç϶ôÇÏ¿´´Ù. º» ³í¹®¿¡¼­´Â MLC ³½µå Ç÷¡½Ã ±â¹Ý ÀúÀåÀåÄ¡ÀÇ ¼º´É Çâ»óÀ» À§ÇØ Á¦¾ÈµÇ¾ú´ø ±âÁ¸ÀÇ °èÃþ ±³Â÷Àû ÃÖÀûÈ­ ±â¹ýµéÀ» ¼Ò°³ÇÏ°í, µÎ ±â¹ýÀÇ »óÈ£ º¸¿Ï¼ºÀ» ºÐ¼®ÇÏ¿© ÇØ´ç ±â¹ýµéÀÇ ÇÑ°èÁ¡À» ±Øº¹ÇÏ´Â »õ·Î¿î ÅëÇÕ ±â¹ýÀ» Á¦¾ÈÇÑ´Ù. MLC ³½µå Ç÷¡½Ã µð¹ÙÀ̽º¿¡ Á¸ÀçÇÏ´Â ¼º´É ºñ´ëĪ¼ºÀ» Ç÷¡½Ã º¯È¯ °èÃþ ¼öÁØ¿¡¼­ ÃÖ´ëÇÑ È°¿ëÇÔÀ¸·Î½á, Á¦¾ÈÇÏ´Â ±â¹ýÀº Àΰ¡µÇ´Â ´Ù¼öÀÇ ¾²±â ¸í·ÉÀ» SLC ³½µå Ç÷¡½Ã µð¹ÙÀ̽ºÀÇ ¼º´ÉÀ¸·Î ó¸®ÇÏ¿© ÀúÀåÀåÄ¡ÀÇ ¼º´É Çâ»óÀ» µµ¸ðÇÑ´Ù. ½ÇÇè °á°ú, Á¦¾ÈÇÏ´Â ±â¹ýÀº ±âÁ¸ ±â¹ý ´ëºñ Æò±Õ 39%ÀÇ ¼º´É Çâ»óÀ» ´Þ¼ºÇÒ ¼ö ÀÖÀ½À» È®ÀÎÇÏ¿´´Ù.
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(English Abstract)
The multi-leveling technique that stores multiple bits in a single memory cell has significantly improved the density of NAND flash memory along with shrinking processes. However, because of the side effects of the multi-leveling technique, the average write performance of MLC NAND flash memory is degraded more than twice that of SLC NAND flash memory. In this paper, we introduce existing cross-layer optimization techniques proposed to improve the performance of MLC NAND flash-based storages, and propose a new integration technique that overcomes the limitations of existing techniques by exploiting their complementarity. By fully exploiting the performance asymmetry in MLC NAND flash devices at the flash translation layer, the proposed technique can handle many write requests with the performance of SLC NAND flash devices, thus significantly improving the performance of NAND flash-based storages. Experimental results show that the proposed technique improves performance 39% on average over individual techniques.
Å°¿öµå(Keyword) ¸ÖƼ ·¹º§ ¼¿ ³½µå Ç÷¡½Ã ¸Þ¸ð¸®   ³½µå Ç÷¡½Ã ±â¹Ý ÀúÀåÀåÄ¡   Ç÷¡½Ã º¯È¯ °èÃþ   °èÃþ ±³Â÷Àû ÃÖÀûÈ­   multi-level cell NAND flash memory   NAND flash-based storages   flash translation layer (FTL)   cross-layer optimization  
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