µ¥ÀÌÅͺ£À̽º ¿¬±¸È¸Áö(SIGDB)
ÇѱÛÁ¦¸ñ(Korean Title) |
Â÷¼¼´ë ¸Þ¸ð¸®¸¦ È°¿ëÇÑ µ¥ÀÌÅͺ£À̽º ±â¹Ý ¹öÆÛ °ü¸® ±â¹ýÀÇ ÃֽŠµ¿Çâ |
¿µ¹®Á¦¸ñ(English Title) |
A Recent Trend of Buffer Management based on Database using Next-generation Memory Module |
ÀúÀÚ(Author) |
À̹̰æ
±èÀçÇü
¹Ú»óÇö
Sang-hyun Park
Jae-hyung Kim
Sang-hyun Park
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¿ø¹®¼ö·Ïó(Citation) |
VOL 32 NO. 01 PP. 0031 ~ 0045 (2016. 04) |
Çѱ۳»¿ë (Korean Abstract) |
ÃÖ±Ù Àü¿øÀÌ °ø±ÞµÇÁö ¾Ê´Â »óÅ¿¡¼µµ µ¥ÀÌÅ͸¦ º¸Á¸Çϱâ À§ÇÑ ºñÈֹ߼º Â÷¼¼´ë ¸Þ¸ð¸® ¼ÒÀÚ°¡ °¢±¤¹Þ°í ÀÖ´Ù. ±×·¯³ª Á¦ÇÑµÈ ¼ö¸í°ú DRAM ´ëºñ ºÎÁ·ÇÑ Áö¿¬´ë±â·Î ÀÎÇØ ´Ü ±â°£ ³»¿¡ DRAMÀ» ¿ÏÀüÈ÷ ´ëüÇϱâ¶õ ¾î·Á¿ï °ÍÀ¸·Î ¿¹»óµÇ°í ÀÖ´Ù. µû¶ó¼ Â÷¼¼´ë ¸Þ¸ð¸® ÀúÀåÀåÄ¡¸¦ Çϵåµð½ºÅ©¸¦ ´ëüÇϰųª Çϵåµð½ºÅ©ÀÇ ¹öÆÛ·Î È°¿ëÇÏ¿© ÇöÀçÀÇ È¯°æ¿¡¼ µ¥ÀÌÅͺ£À̽º ½Ã½ºÅÛÀÇ ¼º´ÉÀ» Çâ»ó½ÃÅ°±â À§ÇÑ ¿¬±¸µéÀÌ °è¼ÓÇؼ ÁøÇàµÇ°í ÀÖ´Ù. º» ³í¹®¿¡¼´Â Â÷¼¼´ë ¸Þ¸ð¸® ÀúÀåÀåÄ¡¸¦ È°¿ëÇÑ ¹öÆÛ °ü¸® ±â¹ýÀ» ¿¬±¸ÇÏ´Â °ÍÀÌ Áß¿äÇÑ ¿¬±¸ ÁÖÁ¦¶ó°í ÆÇ´ÜÇÏ¿© ¹öÆÛ °ü¸® ±â¹ýÀ» À§ÇØ °í·ÁÇØ¾ß ÇÒ ¸Þ¸ð¸® ¼ÒÀÚÀÇ Æ¯¼º°ú ³»ºÎ ±¸Á¶¿¡ ´ëÇØ ¼³¸íÇÏ°í ÀÌ·¯ÇÑ Æ¯¼ºÀ» Àû±ØÀûÀ¸·Î È°¿ëÇÑ °¢°¢ÀÇ ÃֽŠ¹öÆÛ °ü¸® ±â¹ýµéÀÇ µ¿ÇâÀ» ¼Ò°³ÇÏ°íÀÚ ÇÑ´Ù.
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¿µ¹®³»¿ë (English Abstract) |
Next-generation non-volatile memory modules have emerged recently in storage market. However, due to the limited life time and poor performance, these storages are predicted not to completely replace DRAM in the foreseeable future. Accordingly, there is a growing body of studies that these memories are used for an alternative to HDD or write buffer between DRAM and storage devices. In this paper, we consider the buffer management schemes using next-generation non-volatile memory module as an important research topic and also explain the characteristics of these memory modules. Finally, we describe a recent trend of the buffer management schemes using next-generation non-volatile memory modules.
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Å°¿öµå(Keyword) |
DRAM
ºñÈֹ߼º ÀúÀåÀåÄ¡
Ç÷¡½Ã ¸Þ¸ð¸®
SSD
NVRAM
¹öÆÛ °ü¸® ¾Ë°í¸®Áò
DRAM
non-volatile storage
flash memory
SSD
NVRAM
buffer management algorithm
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